Adopting advanced withstand voltage principles and optimized design structures, the new 700-900V SJ-MOS II series products provide sufficient withstand voltage margin for system applications, simplify system design difficulties, improve system reliability, and meet customers' needs for high withstand voltage, low conduction resistance, and high efficiency super junction MOSFETs.
With the advent of the information age, the popularity of electronic devices such as mobile phones has increased, and problems such as long charging times and frequent charging have plagued people. With the acceleration of the pace of life and the increase of mobile phone battery capacity, consumers urgently need a fast charging scheme to ease the charging problem. This has led to the development and popularization of fast chargers.
To achieve fast charging, it is necessary to increase the charging power. High power means an increase in the size of the charger. As a mobile electronic device accessory, the charger must be miniaturized and easy to carry, which puts higher requirements on power efficiency and temperature rise, leading to the development of synchronous rectification. At present, representative fast charging solutions mainly include PI and Iwatt. All adopt synchronous rectification to improve power efficiency and reduce temperature.
The following diagram is the circuit schematic diagram of the PI QC3.0 scheme.
The main chip adopts SC1271K, which integrates primary switch transistor, PWM controller, and secondary synchronous rectification controller internally. The synonym chip in the output part is SC0163D, which fully supports Qualcomm's QC3.0 Class A specification and is compatible with QC2.0 Class A specification.
Typical products such as the Xiaomi 5 mobile phone charger MDY-08-EH. Capable of charging for 5 minutes and talking for 2.5 hours. Output: 5V2.5A, 9V2A, 12V1.5A, nominal maximum output power 18W; Reached the output level of mainstream fast charging chargers.
Wuxi New Clean Energy has launched four synchronous rectification MOS NCEP6020ASNCE0110AS, NCE0114AS, and NCEP0160G for this application, using the latest Super Trench process. The SuperTrench MOS adopts ShieldGate Deep Trench technology with charge balance function, comprehensively improving the switching and conduction characteristics of the device, while reducing the characteristic conduction resistance (Rsp) and gate charge (Qg) of the device. The new Super Trench MOS soft diode performance can effectively reduce voltage spikes in synchronous rectification.
- SOP-8 package
- Ron10=4.0mR (Typ.)
- SOP-8 package
- VDS= 100V,ID =10A
- RDS(ON)< 17m? @ VGS=10V (Typ:14m?)
- RDS(ON)< 20m? @ VGS=4.5V (Typ:15.2m?)
- SOP-8 package
- VDS =100V,ID =14A
- RDS(ON)=8.8mΩ (typical) @VGS=10V
- RDS(ON)=9.8mΩ (typical) @ VGS=4.5V
- DFN5X6-8L(Compatible with SOP-8 packaging)
- VDS =100V,ID =60A
- RDS(ON) <8.5mΩ @ VGS=10V
NCE0114ASOn a 24W fast charging product using the PI scheme INN2215K scheme, the measured efficiency reached 88.5% under more stringent testing conditions. Test conditions: Input 90V AC, output 8V3A. Compared to NCE0114AS, NCE0160G has lower Rdson, higher current, and a thermal resistance as low as 0.7 ℃/W, making it suitable for some more demanding situations.
At the same time, New Jieneng can provide small volume super junction MOSs such as TO-251 and TO-252 for OB and IWTT non integrated primary MOS solutions. Compared to VDMOS, it has lower conduction resistance, which is beneficial for reducing conduction loss, extremely low gate charge, providing faster switching speed, smaller packaging volume under the same specifications, and reducing product size. TO-251 and TO-252 can provide up to 11A650V in packaging. It is difficult for ordinary VDMOS to achieve such a small package.