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Huayi Microelectronics HY

Huayi Microelectronics Co., Ltd. (hereinafter referred to as the “Company”) was established on June 28, 2017. It is a high-tech enterprise under Tianshui Huatian Electronics Group Co., Ltd. that specializes in R&D, production and sales of semiconductor power devices. The company is located in the Caotan Ecological Industrial Park, Xi'an Economic and Technological Development Zone, covering an area of ​​200.8 mu.

Huatian Group has a number of integrated circuit packaging and design patent technologies, and has received a number of major national special projects. Huatian Group’s leading products include: plastic package integrated circuits, semiconductor power devices, analog integrated circuits, hybrid integrated circuits, power modules, integrated pressure sensors/transmitters, integrated circuit packaging equipment, integrated circuit packaging materials, MEMS and optoelectronic devices, etc. More than 1,000 varieties in ten categories.

Through independent innovation, technology accumulation and market expansion, the company has now formed a business system with chip design, overall application of DEMO solutions, and leading technology research and development and product innovation as its core competitiveness. The company has mass-produced more than 200 kinds of products, independent products Mainly divided into trench power MOSFET (medium/low voltage), super junction power MOSFET (high voltage), shielded gate trench power MOSFET (SGT) (medium/low voltage) and insulated gate bipolar transistor (IGBT) series; The packaging and testing products mainly include 11 series such as TO-220, TO-220F, TO-262, TO-263, PPAK, DPAK, IPAK, TO-3P, TO-247, TO-264, IPM, etc., totaling about 50 kinds of packages shape. The company's products can be widely used in electric vehicles, automotive electronics, 5G base stations, Internet of Things (IOT), household appliances, consumer electronics and other fields, especially in the field of domestic electric vehicle controllers with a relatively high market share.

New Clean Energy NCE

Wuxi Xinjie Energy specializes in R&D and sales of semiconductor power devices. At present, the company’s main products include: 12V~200V trench power MOSFET (N-channel and P-channel), 30V~300V shielded gate power MOSFET (N-channel and P-channel), 500V~900V super junction power MOSFET, 600V ~1350V trench gate field cut-off IGBT, related core technology has obtained a number of patent authorizations, and the four major series of products have been recognized as high-tech products in Jiangsu Province.

The company is a high-tech enterprise and one of the top ten semiconductor power device enterprises in China (China Semiconductor Association, 2016&2017&2018). It has Jiangsu Power Device Engineering Research Center and Jiangsu Postgraduate Workstation, focusing on the R&D and industrialization of advanced semiconductor power devices. Many research and development results have been published in international journals/international conferences such as IEEE and ISPSD, and have been indexed by SCI and EI. The company will continue to increase R&D investment, enhance product competitiveness, and aim to become an internationally competitive semiconductor company.

Power Integration POWER

Power Integration Corporation is a high-performance component supplier headquartered in Silicon Valley for high-voltage power conversion. Our integrated circuits provide compact, energy-saving AC and DC power supplies for various electronic products (including smart phones, electrical appliances, smart utility meters, LED lights and many industrial applications). Our SCALE and gate drivers are solar and wind energy, industrial Key components of high-power systems such as motor drives, electric vehicles, and high-voltage DC transmission lines. Since the launch of the EcoSmart® energy efficiency technology of "Power Integration" in 1998, it has prevented billions of dollars in energy waste and millions of tons of carbon emissions.

Jilin China Micro

Jilin China Microelectronics Co., Ltd. is a national high-tech enterprise integrating power semiconductor device design and development, chip processing, packaging and testing and product marketing. It has ranked first in China's power semiconductor device industry for ten consecutive years. The company has been certified by the Ministry of Science and Technology, the Chinese Academy of Sciences and other national institutions, and is listed as a national post-doctoral research station, a national innovative enterprise, a national enterprise technology center, and a CNAS laboratory.

The company's total assets are nearly 5.752 billion yuan, with more than 2,100 employees, and technical personnel account for more than 30% of the company's total number. It covers an area of ​​nearly 400,000 square meters, a building area of ​​135,000 square meters, and a purification area of ​​17,000 square meters. The main purification level is 0.3 One hundred micrometers.

China Microelectronics follows the development of the market closely and will accumulate many years of technical experience, leading the forefront of technology and opening up new areas. The company has multiple power semiconductor discrete devices and IC chip production lines such as 4 inches, 5 inches and 6 inches. The chip processing capacity is 4 million pieces per year, the packaging resources are 2.4 billion pieces per year, and the modules 18 million pieces per year. The company has a number of patents in terminal design, process manufacturing and product design. Each series of products adopts core manufacturing technologies such as IGBT, MOS, bipolar technology and integrated circuit, including IGBT sheet technology, Trench technology, life control and terminal design technology, etc. Leading domestically, reaching the international advanced level in the same industry. The company mainly produces power semiconductor devices and ICs. At present, the company has formed a series of products with IGBT, MOSFET, SCR, SBD, IPM, FRD, BJT, etc. as the main marketing line. The product categories basically cover the entire range of power semiconductor devices and are widely used in automotive electronics, Power electronics, photovoltaic inverters, industrial control and LED lighting, etc., and continue to expand rapidly in strategic emerging areas such as new energy vehicles, photovoltaics, and inverters.

Product List

Part Vds Min
(V)
ID@TC=25℃
(A)
RDS(on) Max PD@TC=25℃
(W)
Vgs
(±V)
Vth
(V)
Ciss Typ
(pF)
Qg Typ
(nC)
Configuration Package
10V(mΩ) 4.5V(mΩ)
JCS740CC 400 10 4.3 5.4 134 20 2~4 650 19.7 single - N TO-220
TOP223YN 700 100 7.8 9 250 50 2~4 N/A N/A single - N TO-220
HYG042N10NS1P 100 160 4.2 N/A 200 20 2~4 7040 119 single - N TO-220
NCEP01T13A 100 130 4.6 N/A 170 20 2~4 N/A N/A single - N TO-220
HY3810P 100 180 5.5 N/A 346 25 2~4 7889 185 single - N TO-220
HY3810NA2P 100 180 5.5 N/A 348 25 2~4 7409 159.2 single - N TO-220
HY4008B 80 200 3.5 N/A 345 25 2~4 8157 197 single - N TO-263

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